Authors: S. Chakravarthi, M. Diebel, P.R. Chidambaram, S. Ekbote, S.T. Dunham, C.F. Machala and S. Johnson
Affilation: Texas Instruments, United States
Pages: 121 - 124
Keywords: phosphorus diffusion, fluorine diffusion, modeling, CMOS
Atomistic modeling methods are emerging as a powerful tool to understand the physical behavior of complex systems. However, continuum process simulators are the core of state of the art TCAD simulators and substantial challenges must be overcome to make effective use of atomistic techniques. As device dimensions shrink into the sub 100 nm regime, one of the problems faced by device designers is the diffusion of phosphorus (P) from the source/drain region into extensions due to reduction of the source/drain sidewall distance. We use this problem to illustrate ho accurate and physical process models can help understand these issues. In particular, we develop a continuum model for phosphorus (P) and fluorine (F) diffusion from our understanding at an atomic level. These models are then calibrated to predict more complex interactions between phosphorus and fluorine.
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