Gehring A., Grasser T., Kosina H., Selberherr S.
Institute for Microelectronics, Vienna, AT
Keywords: non-Maxwellian, simulation, tunneling
We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and exactly reproduces its first three even moments n, Tn, and beta. Here we present a simplified model applicable within the framework of the energy-transport model which only provides n and Tn. Simulation results of long channel EEPROM devices and short channel MOSFETs are presented which show excellent agreement with Monte Carlo results and measurements.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 48 - 51
Industry sector: Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 0-9728422-1-7