Authors: K. Dragosits and S. Selberherr
Affilation: TU Vienna, Austria
Pages: 309 - 312
Keywords: hysteresis, ferroelectric materials, FEM-FET, nonvolatile memory
Simulation of ferroelectric hysteresis allows the analysis of nonvolatile memory cells which are based on ferroelectric materials. We give an overview of our algorithm for the calculation of effects caused by field rotation. Implementation of this algorithm into a device simulator reveals interesting numerical aspects. One of these is that the locus curves of the hysteresis are non-symmetric, thus demanding a quite sophisticated sign handling to the fields and the uxes. Another change to common properties is the occurance of history information, which leads to an extension of the discretization. Also the iteration scheme has to be modified, in order to achieve convergence for nontrivial device structures. The abilities of our simulator are demonstrated by the simulation of a ferroelectric memory field effect transistor (FEMFET).