Authors: M.D. Profirescu, G. Dima, B. Govoreanu and O. Mitrea
Affilation: University Politehnica of Bucharest, Romania
Pages: 214 - 217
Keywords: optimization, design of experiments (DOE), response surface model (RSM), HEMT
In this paper, the optimization of heterostructure devices using the Design of Experiments concept and advanced Response Surface Models is presented. As an example, the structural optimization of a pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8As/GaAs pulse doped HEMT is discussed.