Authors: V. Tesluk and O. Korbetskyy
Affilation: Lvov Polytechnic, Ukraine
Pages: 99 - 101
Keywords: numerical simulation of IC process, diffusion, oxidation, route, step, transition
A technological process of the VLSI fabrication constantly improves. In such conditions, new technology and constructive problems appear when making IC with submicron sizes. Decision for these problems is possible only by using CAD tools, particlarly mathematical modeling. It allows considerably to accelerate a process of the integrated devices design and reduce expenses on the technological complete of the silicon IC's fabrication routes.