Authors: W. Romes, J. Muchow, S. Finkbeiner, J. Franz, O. Schatz and H-P. Trah
Affilation: Robert Bosch GmbH, Germany
Pages: 624 - 627
Keywords: pressure sensor, temperature hysteresis, test structure, design method
The signal formation in piezoresistive silicon pressure sensors has been studied for many years and is very well understood meanwhile. Nevertheless there are higher order effects of nonideal behaviour such as nonlinearities and hys-teresis effects which limit the possible accuracy of such sen-sors considerably. In high volume applications like in automotive area one has to think about minimization of such effects in order to improve performance and also to enhance yield and to reduce costs. In this paper we demonstrate the reduction of temperature hysteresis effects of pressure sensors. The improvement is achieved using ‘influence strength’ (EFS, from german Einflußstärke) analysis and special test structures to examine the influence of local hysteresis effects on the behaviour of semiconductor devices.
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