Authors: J. Dalla Torre, G.H. Gilmer, D.L. Windt, F.H. Baumann, H. Huang, T. Díaz de la Rubia and M. Djafari Rouhani
Affilation: Bell Labs, Lucent Technologies, United States
Pages: 467 - 470
Keywords: metal, polycrystalline, barrier layer, Monte Carlo, simulation
We present Monte Carlo simulations of metallic thin films grown by sputter deposition from an infinite target. The Monte Carlo model includes ballistic deposition from the target, surface diffusion, and polycrystalline film growth. We study materials with low atomic mobility such as those involved in "barrier layer" films for silicon devices. We discuss the mechanism leading to columnar growth and the influence of the film orientation on structure and density. Finally, we show that polycrystalline films exhibit voids at the grain boundaries, which leads to columnar growth over a wider range of conditions than that for single crystal films.
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