Authors: S.J. Wigger, M. Saraniti and S.M. Goodnick
Affilation: Arizona State University, United States
Pages: 415 - 418
Keywords: semiconductor device modeling, poisson solver, multi-grid, EEPROM, Fowler-Hordheim tunneling
In this paper, a full three-dimensional (3D), inhomogenous linear multi-grid Poisson solver is presented for application in particle-based simulation tools for devic emodeling. This algorithm represents the first such fully 3D multi-grid solver for device applications. As a test for the linear POiisson solver, a nonlinear version is developed using Newton's method and a 3D EEPROM (Electrically Erasable/Programmable Read ONly Memory) device is modeled. The solution of the nonlinear Poisson equation provides thermal equilibrium characteristics of the device. The basic functionality of an EEPTROM device can be understood with a complete electrostatic analysis, making it an ideal application for the solver. The relationship between the threshold voltage and the floating gate charge in the EEPROM device is analyzed for various geometries. The Fowler-Nordheim tunneling current density is also determined as a function of the EEPROM channel dimension.