Authors: J. Kung
Affilation: National Lienho College of Technology and Commerce, Taiwan
Pages: 447 - 448
Keywords: analytical field mobility model, Poly-Si, TFT
An analytical mobility model of the polysilicon (Poly-Si) TFT is important for the design and analysis of display arrays. These transistors can be used both as switching and driving components. Jacunski et al.  used an empirical model to explain the mobility behavior of n-channel Poly-Si TFTs. However p-channel devices and the mobility deterioration at large gate to source biases have not been emphasized. We consider that the scattering of Poly-Si TFTs occurs due to defects present in the grain interior, and at grain boundaries, and surface roughness.
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