Authors: J. Geßner, F. Schwierz, H. Mau, D. Nuernbergk, M. Roßberg and D. Schipanski
Affilation: Technische Universitat Ilmenau, Germany
Pages: 407 - 410
Keywords: SiGe HBT, hydrodynamic model, frequency limits , simulation
The dynamic performance of SiGe HBTs in terms of the cut off frequency and the maximum frequency of oscillation is investigated by numerical device simulation. Simulations based on both the Drift Diffusion Model and the Hydrodynamic Model are carried out for a variety of different transistor structures to clarify the influence of the vertical transistor design on device performance. Based on the simulation results the validity of the Drift Diffusion Model is discussed and design criteria for RF SiGe HBTs are derived.
Nanotech Conference Proceedings are now published in the TechConnect Briefs