Authors: H-M Ho, Y. Zu, K.V. Loiko and D.H.Y. Lim
Affilation: Chartered Semiconductor Manufacturing Ltd., Singapore
Pages: 209 - 212
Keywords: TCAD calibration, 2D process and device simulation, reverse short charmel effect, short channel effect, 0.25 um CMOS
This paper describes a physically based methodology for calibrating 2D semiconductor process and device simulators. The calibration begins with the determination of 1D and 2D doping profiles by means of extracting model parameters from electrical data without SIMS analysis, followed by tuning mobility model parameters to match the device I-V characteristics. The methodology is successfully demonstrated for NMOS and PMOS devices fabricated by 0.25pm salicide retrograde well CMOS process.