Authors: H. Fu, M.L. Kniffin, G. Watanabe, M.P. Masquelier and J. Whitfield
Affilation: Motorola, Inc., United States
Pages: 186 - 189
Keywords: 1/f noise, depletion mode NMOS, surfacemicromachined suspended gate FET
This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion mode nMOSFET. Due to the depletion mode nature of both surfacemicromachined suspended gate FET and standard FET, 1/f noise decreases as the gate bias approaches to tne tbreshold voltage. 1/f noise component can be modeled using the standard SPICE type of equation. The derived model can be used directly in the optimization of suspended gate transducer design.