Authors: D. Mladenovic, J. Hutchins, E. Tran and S. Lu
Affilation: Motorola, United States
Pages: 145 - 150
Keywords: diffused piezoresistors, temperature coefficients, span
This article reviews elements needed to be considered in order to improve accuracy of the temperature coefficient and sensitivity (span) simulation for diffused piezoresistors. Modeling is done through an algorithm developed in 'Mathematica'. Input parameters for the model are device doping profiles The algorithm divides doping profile into fnite elements that are considered infinitesimal, uniformly doped areas. The model was evaluated on a number of different experimental parts. The same test samples were used for electrical data gathering and SIMS analysis. The test devices had junction depths varied between 0.6 and 4 microns, and surface boron concentration between 5E17 cm-3 and lE18 cm-3. Simulation results correlate very well with measurements.
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