Authors: A.R. Atwell, R.S. Okojie, K.T. Kornegay, S. Roberson and A. Beliveau
Affilation: Cornell University, United States
Pages: 270 - 274
Keywords: SOI devices, narrow channel effect, effective potential, Landauer’s formalism
Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. Typical method to simulate these effects is a simultaneous solution of the Schrödinger and Poisson equations, which can be a very time consuming procedure. An alternative way is to use the recently developed effective potential approach that takes into account the natural non-zero size of an electron wave packet in the quantized system. In this work, we have applied the effective potential approach in a recently proposed SOI device structure to quantify these effects. In a second effort we utilize the Landauer’s formalism to calculate the on-state current quantum mechanically and estimate the increase in device threshold voltage due to the lateral quantization.
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