Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

System Level Modeling of MEMS Chapter 3

Simulation of Manufacturing Variations in a Z-axis CMOS-MEMS Gyroscope

Authors: S. Iyer and T. Mukherjee

Affilation: Carnegie Mellon University, United States

Pages: 186 - 189

Keywords: manufacturing variations, CMOS-MEMS, gyroscope

This paper uses MEMS circuit-level simulation to correlate gyro performance measures such as zero rate output (ZRO), linear acceleration sensitivity (Sa) and cross-axis sensitivity (Sca) to geometrical asymmetries. Elastic and electrostatic asymmetries in the gyroscope may arise due to device-level manufacturing variations in beam width, comb gap and metal mask misalignment in the CMOS-MEMS process. Analytical equations for the non-idealities are derived and compared with the simulation results. The analyses and simulations are used to develop pointers for robust design as well as manufacturing tolerances for limiting nonidealities.

ISBN: 0-9708275-7-1
Pages: 764