Authors: D.V. Kumar, R.A. Thakker, M.B. Patil and V.R. Rao
Affilation: Indian Institute of Technology - Bombay, India
Pages: 742 - 745
Keywords: look-up Table, non-quasi-static model, terminal charges, MOSFET, circuit simulation
In this paper, we study the "non-quasi static" (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT)  MOSFET model implemented in a general-purpose circuit simulator SEQUEL , device simulator ISE-TCAD  and SPICE BSIM3v3  QS and NQS models. An NMOS transistor of channel length 2 um is simulated using LUT, ISE and SPICE3 and terminal currents are qualitatively studied. The method for extraction of terminal charges, which are required for circuit simulation using the LUT approach also presented.
Nanotech Conference Proceedings are now published in the TechConnect Briefs