Authors: M. Jamal Deen and C-H Chen
Affilation: McMaster University, Canada
Pages: 694 - 697
Keywords: RF MOSFET, noise, parameter extraction
In this paper, a novel procedure for extracting the important noise sources in MOSFETs is reviewed. Examples of extracted noise sources as a function of frequency, bias and geometry are presented using devices from a 0.18 mm CMOS process and from RF noise measurements. A model for the channel noise current is proposed and comparisons to experimental data is presented. is obtained through either DC or a.c. measurements. The noise sources that must be characterized are the channel noise , induced gate noise and their correlation.
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