A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs

Fossum J.G.
University of Florida, US

Keywords: physical compact model, predictive circuit simulation, scaled CMOS., Si MOSFETs

A process/physics-based compact model (UFPDB), unified for PD/SOI and bulk-Si MOSFETs with a single small set of parameters, is overviewed. The utility of UFPDB, e.g., for benchmarking PD/SOI and bulk-Si CMOS and for projecting performances of scaled technologies, is demonstrated via UFPDB/Spice3 device/circuit simulations.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 686 - 689
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1