Authors: M. Miura-Mattausch, H. Ueno, J.H. Mattausch, S. Kumashiro, T. Yamaguchi, K. Yamashita and N. Nakayama
Affilation: Hiroshima University, Japan
Pages: 678 - 681
Keywords: MOSFET model, surface potential, charge-based modeling, sub-100nm technology
Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, the first self-consistent surface-potential model for circuit simulation based on the drift-di usion approximation and charge descriptions.
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