Authors: G. Gildenblat and T.L. Chen
Affilation: Pennsylvania State University, United States
Pages: 657 - 661
Keywords: compact MOSFET model, surface potential
This paper outlines a new surface-potential-based compact MOSFET model (SP) developed at The Pennsylvania State University. The main objective of this work is to find practical engineering solutions of several long-standing problems of surface-potential-based modeling and to use them as a basis for a comprehensive compact MOSFET model. As a result of this approach the physical content of the model is significantly increased while the number of model parameters is reduced without sacrificing the quality of the fit of experimental data.
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