Authors: Y. Zhang and P.P. Ruden
Affilation: Oklahoma State University, United States
Pages: 624 - 627
Keywords: domain decomposition method, HBT, GaN, polarization charge.
Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures are designed and the trade-off is discussed.