Authors: A. Pacelli, P. Palestri and M. Mastrapasqua
Affilation: State University of New York-Stony Brook, United States
Pages: 616 - 619
Keywords: bipolar transistors, compact models, device simulation, thermal resistance, self-heating
We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and with deep-trench isolation. The cross-heating effect in multifinger devices is also modeled.