Authors: W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding
Affilation: University of Illinois, United States
Pages: 576 - 579
Keywords: interface state generation, lifetime extrapolation, deuterium
An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.
Nanotech Conference Proceedings are now published in the TechConnect Briefs