Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

Authors: W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding

Affilation: University of Illinois, United States

Pages: 576 - 579

Keywords: interface state generation, lifetime extrapolation, deuterium

An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.

ISBN: 0-9708275-7-1
Pages: 764