Semiconductor Device Modeling Chapter 11

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

Authors: H.P. Felsl and G. Wachutka

Affilation: Munich University of Technology, Germany

Pages: 568 - 571

Keywords: Silicon Carbide, high power electronics, Schottky diode, breakdown behavior, device simulation

Abstract:
We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky contact. Furthermore we examined the influence of the effective surface charge of the p-guardring on the breakdown characteristics. Two different methods for determining the breakdown voltage by device simulation were considered to evaluate their ability of predicting the real reverse behavior.

ISBN: 0-9708275-7-1
Pages: 764