Authors: D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry
Affilation: Arizona State University, United States
Pages: 556 - 559
Keywords: MOSFETs, asymmetric device structures, space-quantization effect, threshold voltage degradation, on-state current degradation
We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.