Authors: H. Takeda, N. Mori and C. Hamaguchi
Affilation: Osaka University, Japan
Pages: 596 - 599
Keywords: SOI MOSFET, pseudo-potential method, Monte Carlo simulation, non-parabolicity
In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and effects of the non-parabolicity of the Si band structure will significantly influence the two-dimensional electronic states. We studied effects of the non-parabolicity on the electronic states in SOI MOS-FETs with such an ultra-thin Si-layer by using an empirical pseudo-potential method and analyzed the electron transport properties by performing single-electron Monte Carlo simulations.
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