Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Authors: L.B. Sipahi and T.J. Sanders

Affilation: Florida Institute of Technology, United States

Pages: 588 - 591

Keywords: modeling, simulation and statistical design of RF ICs, LNA, wireless communications, SiGe HBT, Germanium content

Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier mobilities and saturation velocities have been found in III-V compound materials, for instance GaAs, AlGaAs, and InP. The project undertaken has utilized a novel methodology to achieve enhanced circuit designs using a multiple statistical simulation approach. This methodology has been described in detail elsewhere [1]. The goal of this project is to extend this methodology to characterize SiGe HBTs and elucidate their dependence on germanium content.

ISBN: 0-9708275-7-1
Pages: 764