Authors: R.V.N. Melnik and M. Willatzen
Affilation: University of Southern Denmark, Denmark
Pages: 506 - 509
Keywords: quantum dots with wetting layers, envelope functions
The influence of wettin-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown on GaAs(100) oriented substrates leads to self-assembly of quantum dots with wetting layers as is known experimentally. It is shown that the quantum-dot ground state of the combined structure is considerably affected by the presence of the wetting layer, and similarly, wetting-layer states are affected by the presence of the quantum dot. This quantum dot/wetting layer state interference is expected t have an impact on carrier-capture phenomena and operation speeds of electronic and optical devices using quantum dots as active regions.
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