Authors: C. Le Royer, G. Le Carval, M. Sanquer and D. Fraboulet
Affilation: CEA-LET, France
Pages: 502 - 505
Keywords: modeling, simulation, nanocrystal memory, double tunnel junction, quantum confinement
For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) , we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing and retention characteristics of the MTJM cell, and so we show that this concept could be an alternative for Advanced DRAM Applications (for the 50 nm node predicted around 2011 by ITRS).
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