Authors: P. Scheiblin, F. Roger, D. Poncet, C. Laviron, P. Holliger, F. Laugier, E. Guichard and J.P. Caire
Affilation: LETI, France
Pages: 390 - 393
Keywords: calibration, TCAD, Ion Implantation, DoE, RSM
In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) underlines the need for development of analytical models for ion implantation simulations, supported by Monte Carlo models. These models become more and more complex, from the simple Gaussian approximations to the latest double Pearson-4 distributions, or Legendre polynomials fitting. Leaving apart the domain of the sophisticated ion implantation models, we found that the value of the doping concentration itself could be expressed with a fair accuracy, as a function of the experimental conditions. The predictivity of this technique is insured by the use of Design Of Experiments and Response Surface Methodology.
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