Matsuda K., Kanda Y.
Naruto University of Education, US
Keywords: heavy doping, MEMS, mobility, piezoresistance
Simulation of the semiconductor transport under heavily doped and stressed conditions is presented. The degenerate statistics are introduced by taking into account the density-of-state functions for the band tail and the impurity band. The momentum-dependent dielectric function is used for the dispersive screening and the carrier-carrier interaction which appear in the impurity scattering of the heavily doped silicon. The effects of mechanical stress on the conductivity are implemented by the relation between the stress and the Fermi energy, in which contributions of the carrier transfer and the mobility change for each of the split bands are included. As an application of this modeling, simulations for piezoeresistive sensors are presented.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 346 - 349
Industry sector: Sensors, MEMS, Electronics
Topics: Chemical, Physical & Bio-Sensors, MEMS & NEMS Devices, Modeling & Applications
ISBN: 0-9708275-0-4