Authors: R. Akis, S. Milicic, D.K. Ferry and D. Vasileska
Affilation: Arizone State University, United States
Pages: 550 - 553
Keywords: ultra-small MOSFETs, quantization, Monte Carlo simulation, SOI devices.
Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a simultaneous solution of the S
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