Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Authors: D. Munteanu, G. Le Carval and G. Guegan

Affilation: LETI, CEA/Grenoble, DMEL, France

Pages: 462 - 465

Keywords: non-stationary effects, velocity overshoot, impact ionization, MOS technology, numerical simulation

This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy Balance). The analysis is performed on realistic devices, showing which electrical features have to be taken into account for evaluating the performances of advanced device architectures (down to 50nm gate length). An original point of this work is the investigation of technology influence (channel doping and LDD doping) on injection velocity at source side and on drain current. We conclude that specific engineering of access region have to be envisaged for taking full advantage of non-stationary effects on nowadays device performances.

ISBN: 0-9708275-0-4
Pages: 638