Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

Noise Modelling of Microwave Bipolar Transistors

Authors: F. Patti, V. Miceli and B. Spagnolo

Affilation: Università di Palermo, Italy

Pages: 530 - 533

Keywords: noise modelling, stochastic differential equation, microwave transistors

In this paper we present a stochastic approach to study the noise modelling of bipolar microwave transistors. Starting from experimental on-wafer measurements of the scattering and noise parameters of these bipolar devices we obtain the corresponding Giacoletto model with the noise internal sources. We write down then the stochastic differential equations of the Giacoletto model for a short-circuited output in order to study the noise properties of these devices. From the power spectrum of the output current we obtain the behaviour of the noise figure as a function of the operating frequency. Our theoretical results are in good agreement with experimental ones. The present approach allows to study the statistical properties of the output current for different statistics of the internal noise sources of the bipolar transistors (BJT and HBT).

ISBN: 0-9708275-0-4
Pages: 638