Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET's) Based on a Physical Model for Drift

Authors: S. Jamasb, S.D. Collins and R.L. Smith

Affilation: Conexant Systems, United States

Pages: 514 - 517

Keywords: flicker (1/f) noise, drift, ISFET

A physical model for drift in pH-sensitive ISFET's is employed to extract the inherent low-frequency noise power spectral density associated with these devices. The noise spectrum extracted from measured drift data demonstrates ideal 1/f noise behavior down to 10Hz. At lower frequencies, however, the resolution and accuracy of the ISFET is dominated by the drift behavior of the device. The distinction between drift and low-frequency noise is discussed based on the physical bases underlying each phenomenon.

ISBN: 0-9708275-0-4
Pages: 638