Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling and Novel Structures Simulation Chapter 10

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs
C. Sudhama, O. Spulber, C. McAndrew and R. Thoma
Motorola SPS, US

Spatial Modulation of the Dielectric Permittivity and its Effect on the Spectral Responsivity of Heterodimensional Photodetectors
F. Castro and B. Nabet
Motorola Laboratories, US

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs
C. Jungemann, C.D. Nguyen, B. Neinhüs, S. Decker and B. Meinerzhagen
Universitat Bremen, DE

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology
D. Munteanu, G. Le Carval and G. Guegan
LETI, CEA/Grenoble, DMEL, FR

A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks
T. Binder, C. Heitzinger and S. Selberherr
Technical University Wien, AT

3-D Simulation and Modeling of Signal Isolation in RF/IF Circuits
S. Bharatan, P. Welch, K.H. To, R. Thoma and M. Huang
Motorola, Digital DNA Laboratories, US

A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation
T. Grasser, H. Kosina, M. Gritsch and S. Selberherr
TU Wien, AT

Substrate Current Simulations at Elevated Temperatures
E. Lyumkis, R. Mickevicius, B. Polsky, G. Loechelt, A. Zlotnicka and R. Thoma
Integrated Systems Engineering, Inc., US

A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor
G. Chunqi, D. Manh Anh, Z. Zheng and F. Boyland
Chartered Semiconductor Manufacturing Ltd., SG

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s
S.B. Chiah, X. Zhou, K.Y. Lim, Y. Wang, A. See and L. Chan
Nanyang Technological University, SG

A Model for Fully Depleted Double Gate SOI MOS Transistors Including Temperature Effects
R. Gharabagi
St. Louis University, US

A Simplified Approach for Noise Parameter Transformation Between Common Emitter and Common Base InP DHBT
Y.Z. Xiong, G.I. Ng, H. Wang, C.L. Tan and H. Yang
Nanyang Technological University, SG

Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors
B. Bakeroot, P. Moens, M. Vermandel and J. Doutreloigne
University of Gent, BE

Broadband Millimeter Wave Finline Antenna Simulation and Performance
J.S. Fu, C.L. Ng, Y. Kwang, E.K. Sia and C. Lu
Nanyang Technological University, SG

Three-Dimensional Simulation of AlxGa1-xAs/GaAs Gradual Heterojunction Bipolar Transistor
A.J. García-Loureiro, T.F. Pena, J.M. Lopez-González and Ll. Prat Viñas
Univ. Santiago de Compostela, ES

Simulation of Recess-Structure Dependence of Gate-Lag Phenomena in GaAs MESFETs
K. Horio, Y. Mitani and A. Wakabayashi
Shibaura Institute of Technology, JP

Determination of Low-Frequency Noise Spectrum in Ion-sensitive Field Effect Transistors (ISFET's) Based on a Physical Model for Drift
S. Jamasb, S.D. Collins and R.L. Smith
Conexant Systems, US

TCAD Modeling using a Neural Network Based Approach
R. Matei, G. Dima and M.D. Profirescu
University Politehnica of Bucharest, RO

Modeling of Antipodal/BCSSS Transition for Millimeter Wave Finline High Q Local Injected Mixer
E.K. Sia, J.S. Fu, C. Lu and S.H. Tan
Nanyang Technological University, SG

Investigation of the Mechanism of Floating Node Assisted CMOS Latch-Up
S-P. Sim, P. Guo, A. Kordesch, W.F. Chen, C-M. Liu, C.Y. Yang and K. Lee
Santa Clara University, US

Noise Modelling of Microwave Bipolar Transistors
F. Patti, V. Miceli and B. Spagnolo
Università di Palermo, IT

A New Approach for the Extraction of Threshold Voltage for MOSFET’s
J.S. Wong, J.G. Ma, K.S. Yeo and M.A. Do
Nanyang Technological University, SG

Parallel Dynamic Load Balancing for Semiconductor Device Simulations on a Linux Cluster
Y. Li, S-S. Lin, S-M. Yu, J-L. Liu, T-S. Chao and S.M. Sze
National Chiao Tung University, TW

Simulation of HgCdTe Double Layer Heterojunction Detector Devices
G.T. Hess, T.J. Sanders, G. Newsome and T. Fischer
Florida Institute of Technology, US

A Comparative Study of Double-Gate and Surrounding-Gate MOSFETs in Strong Inversion and Accumulation Using an Analytical Model
Y. Chen and J. Luo
University of California Berkeley, US

ISBN: 0-9708275-0-4
Pages: 638