Authors: W. Qian, X. Zhou, Y. Wang and K.Y. Lim
Affilation: Nanyang Technological University, Singapore
Pages: 396 - 399
Keywords: velocity-overshoot subthreshold current model, deep-submicron MOSFET devices
In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.
Nanotech Conference Proceedings are now published in the TechConnect Briefs