Authors: K. Brecl and J. Furlan
Affilation: University of Ljubljana, Slovenia
Pages: 376 - 379
Keywords: modeling, multilayer devices, extended Ebers-Moll model
The interest in multilayer thin-film semiconductor structures is becoming bigger day by day. For multilayer structures both, low-quality and good-quality materials are used. An extended Ebers-Moll model for simulating multiayer structures was developed. The standard Ebers-Moll model for a transistor structure was extended to be used for more junctions. In addition photogenerated current, recombination current in space-charge region and carrier multiplication are added to the model. This model is actually used for a four-layer structure but can be easily extended to be used for any multilayer semiconductor device.
Nanotech Conference Proceedings are now published in the TechConnect Briefs