Authors: H.C. Morris, E. Cumberbatch, T. Phillips and B. Hinderberger
Affilation: Claremont Graduate University, United States
Pages: 329 - 332
Keywords: current-voltage characteristics, SOI-MOSFET, analytical modeling
Exact formulae for the current-voltage characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward [1,2]. A detailed comparison with test data is presented and the model is shown to be effective over a range of device geometries and voltages up to the kink attributable to impact ionization.
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