Authors: K.Y. Lim, X. Zhou and Y. Wang
Affilation: Nanyang Technological University, Singapore
Pages: 317 - 320
Keywords: RSCE, lateral non-uniform profile, threshold voltage, compact model, MOSFET
This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian profiles to simulate boron pile-up at the source and drain edges of nMOS devices. The model has a simple compact form that can be utilized to study and characterize the pile-up profile of advanced halo-implant MOSFETs. The analytical model has been applied to, and verified with, experimental data of a 0.25-mm CMOS process for various channel length and substrate bias conditions.