Authors: K. Matsuda and Y. Kanda
Affilation: Naruto University of Education, Japan
Pages: 605 - 608
Keywords: mobility, sensor, TC, piezoresistance, Hall
Simulation for the temperature coefficient of piezoresistive and Hall sensors is presented. Carrier and ionized impurity concentrations in the n-type silicon gage are calculated from the charge balance equation by applying Newton iteration scheme. The impurity band and the tail of band edge are taken into account as the density-of-state functions. The electron mobility is calculated by appropriately combing lattice, ionized impurity and neutral impurity scattering. The effect of electron-electron scattering is incorporated in the relaxation time of each scattering. The dependencies of temperature and impurity concentrations for electron mobility are simultaneously obtained. The temperature coefficients of the piezoresistance and Hall coefficients are computed as the functions of dopant concentrations.
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