MSM 2000
MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Quantum Devices Chapter 10

Long-Range Coulomb Interactions in Small Silicon Devices: Transconductance and Mobility Degradation

Authors: M.V. Fischetti and S.E. Laux

Affilation: IBM Research Division, United States

Pages: 461 - 464

Keywords: Monte Carlo simulations, Coulomb interactions, MOS transistors mobility VLSI scaling

In small silicon devices,conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily-doped drain,source,and gate regions.We show that for devices with channel lengths shorter than about 40 nm and oxides thinner than 2.5 nm these interactions cause a reduction of the electron velocity.We present results obtained using both semiclassical two-dimensional self-consistent Monte Carlo-Poisson simulations and a quantum-mechanical model based on electron scattering from gate-oxide interface plasmons.

ISBN: 0-9666135-7-0
Pages: 741