Authors: M.V. Fischetti and S.E. Laux
Affilation: IBM Research Division, United States
Pages: 461 - 464
Keywords: Monte Carlo simulations, Coulomb interactions, MOS transistors mobility VLSI scaling
In small silicon devices,conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily-doped drain,source,and gate regions.We show that for devices with channel lengths shorter than about 40 nm and oxides thinner than 2.5 nm these interactions cause a reduction of the electron velocity.We present results obtained using both semiclassical two-dimensional self-consistent Monte Carlo-Poisson simulations and a quantum-mechanical model based on electron scattering from gate-oxide interface plasmons.
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