Authors: D.K. Ferry
Affilation: Arizona State University, United States
Pages: 11 - 14
Keywords: ultra-submicron devices, quantum effects, discrete impurities, molecular dynamics
It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths of less than 70 nm within another decade. While there are questions to be answered in the fabrication of these devices, the questions that must be addressed in simulation are no less difficult. Indeed, pushing to dimensional sizes such as this will probe the transition from classical to quantum transport, and many new issues will arise that must be addressed. In this paper, several of these issues, connected with the discreteness of point charges and with the onset of quantum effects will be discussed.