Authors: Y. Li, O. Voskoboynikov and C.P. Lee
Affilation: National Nano Device Laboratories, Taiwan
Pages: 431 - 434
Keywords: semiconductor quantum ring, InAs/GaAs, electronic state, computer simulation
In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. We solve the 3D model by nonlinear iterative algorithm to obtain self-consistent solutions. The model and simulation provide a novel way to calculate the energy levels of nano-scopic semiconductor quantum ring. They are useful to clarify the principal dependencies of quantum ring energy states on material band parameter, ring size and shape.
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