Nanotech 2002 Vol. 2
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology

Materials and Nanostructures Studies Chapter 16

Energy-Band Structure of Strained Indirect Gap Semiconductor: A k . p Method

Authors: N. Cavassilas, F. Aniel and G. Fishman

Affilation: CNRS, France

Pages: 411 - 414

Keywords: k.p. theory, strain, SiGe

A strain Hamiltonian Hst, associated with a sps* k.p Hamiltonian Hkp is used to descibe the valence band and the first two conduction bands of a strained indirect semiconductor. Hst takes into accoutn the Bir-Pikus parameters (a, b) used up to now to describe only the Brillouin zone center. The Hkp+Hst Hamiltonian allows one to calculate the energy dispersio nall over the Brillouin zone. The method is applied to Si strained on Sil-xGex alloy. We do not use the local (in k space) deformation potentials Pu, and pd conventionally used in indirect gap semiconductor to describe the conduction band. The energy band gap, the conduction bands split into the four equivalent in-plane valleys delta4 and the two valleys along the growth direction delta2 which result from teh above Hkp+Hst Hamiltonian are in very good agreement with other publications.

ISBN: 0-9708275-6-3
Pages: 504

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