Authors: J. Yang, L. de la Garza, T.J. Thornton, M. Kozicki and D. Gust
Affilation: Arizona State University, United States
Pages: 318 - 321
Keywords: SOI, electron transport, molecular electronics
We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately – 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 x 1011 cm-2 in the positive charge density located at the surface of the MOSFET.
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