Authors: F. Leonard
Affilation: Sandia National Laboratories, United States
Pages: 298 - 301
Keywords: nanotube, electronic transport, transistor, ballistic, nanowire
We discuss recent calculations of electronic transport in a 10 nm long, three-terminal carbon nanotube device. By calculating self-consistently the electrostatic potential and charge in the device, we obtain the band bending along the nanotube as a function of the applied voltages. This band bending strongly influences the transmission of carriers across the nanotube, giving rise to “on” and “off” regimes characteristic of transistor action.