Leonard F.
Sandia National Laboratories, US
Keywords: ballistic, electronic transport, nanotube, nanowire, transistor
We discuss recent calculations of electronic transport in a 10 nm long, three-terminal carbon nanotube device. By calculating self-consistently the electrostatic potential and charge in the device, we obtain the band bending along the nanotube as a function of the applied voltages. This band bending strongly influences the transmission of carriers across the nanotube, giving rise to “on” and “off” regimes characteristic of transistor action.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Published: April 22, 2002
Pages: 298 - 301
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 0-9708275-6-3