Index of Keywords


Simulation Study of Non-Quasi Static Behaviour of MOS Transistors

A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling

The Use of a Green's Function Formalism for the Simulation of Semiconductor Device Performance

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

A Vertical MOSFET for Charge Sensing in the Convex Corner of Si Microchannels

Single Transistor AND Gate

Quantum and Kinetic Simulation Tools for Nano-scale Electronic Devices

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Substrate Current in Surface-Potential-Based Compact MOSFET Models

A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling Current

Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode

A Surface-Potential-Based Extrinsic Compact MOSFET Model

A Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors

Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology

Full-band Particle-based Simulation of Germanium-On-Insulator FETs

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

A Study of the Threshold Voltage Variations for Ultra-thin Body Double Gate SOI MOSFETs

A New Semiconductor-Wafer Market Based on the Deepening of Surface Undulations to Form Strongly Textured Atomic Ridges (STAR) With Pitches from 0.6 to 5.4 nm: Model Demonstrations in Electronics and the Physical and Life Sciences