Index of Keywords


Design and Characterization of a Fully Differential Mems Accelerometer Fabricated Using METALMUMPS Technology

The field self-calibration method of MEMS gyroscopes and accelerometers for Micro inertial measurement system

FEM study of a 3-axis thermal accelerometer based on free convection in a microcavity

accelerometer model

Dynamic Modelling and Simulation of Microelectromechanical Devices with a Circuit Simulation Program

Compact Large-Displacement Model for Capacitive Accelerometer


Wireless sensor networks for activity monitoring in safety critical applications


The Evolution of Vievs of in vivo Use of Nanoparticles for Tumor Treatment


Accommodation of Characterization Tools

accommodation coefficient

Accommodation coefficient investigation in rectangular micro-channels for large Knudsen number range


Accommodation of Characterization Tools: Understanding the Building Vibration, Stray Electromagnetic Fields and Acoustic Interference to Avoid Catastrophic Inferences in New Building Construction or Building Renovations


A New Environmental Accountability System for the Nanotechnology Industry


Influence of liposome size on accumulation in tumor and therapeutic efficiency of liposomal near-IR photosensitizer for PDT based on aluminum hydroxide tetra-3-phenylthiophthalocyanine

Uptake and Elimination Behaviors of Polyethyleneimine (PEI)-Coated Multi-Walled Carbon Nanotubes by Eisenia Foetida and Daphnia Magna

Antibacterial activity and intracellular accumulation of silver nanoparticles on Escherichia coli K-12

accumulation layer

A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET's Operation from the Accumulation to Depletion Region

accumulation mode

HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

Analytic Channel Potential Solution of Symmetric DG AMOSFETs


Compact Modeling and Circuit Impact of a Novel Frequency Dependence of Capacitance in RF MOSFETs

accumulative damage

Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon


Equation of p-n Junction for High Current Density Models of Transistor