NSTI Nanotech 2009

An Analytic Terahertz Signal Detection Model of Silicon-based Nanowire Gated Field Effect Transistor

F. He, Y. Chen, X. Mu, H. Lou, L. Zhang, Y. Song

Keywords: modeling, Terahertz Signal Detection, Nanowire Gated Field Effect Transistor


In this paper, an analytical terahertz (THz) signal detection model of Silicon-based nanowire MOSFET (NWFET) is proposed. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated.
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